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SI2328DS-HF 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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SI2328DS-HF 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 4 page SMD Type www.kexin.com.cn 2 MOSFET ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=1mA, VGS=0V 100 V VDS=100V, VGS=0V 1 VDS=100V, VGS=0V, Ta=70℃ 75 Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ± 100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 2 4 V On-State Drain Current *1 ID(on) VDS ≥ 15 V, VGS = 10 V 6 A Static Drain-Source On-Resistance *1 RDS(On) VGS=10V, ID=1.5A 250 mΩ Forward Transconductance *1 gFS VDS=15V, ID=1.5A 4 S Gate Resistance Rg 0.5 2.4 Ω Total Gate Charge Qg 3.3 4 Gate Source Charge Qgs 0.47 Gate Drain Charge Qgd 1.45 Turn-On DelayTime td(on) 7 11 Turn-On Rise Time tr 11 17 Turn-Off DelayTime td(off) 9 15 Turn-Off Fall Time tf 10 15 Body Diode Reverse Recovery Time trr IF= 1.5A, dI/dt= 100A/μs 50 100 Maximum Body-Diode Continuous Current IS 1.0 A Diode Forward Voltage VSD IS=1.0A,VGS=0V 0.8 1.2 V Zero Gate Voltage Drain Current IDSS μ A VGS=10V, VDS=50V, ID=1.5A nC ns ID=0.2A, VDS=50V, ,VGEN=10V RL=33Ω,RG=6Ω *1 Pulse test: PW ≤ 300us duty cycle≤ 2%. ■ Marking Marking D8* F N-Channel MOSFET SI2328DS-HF (KI2328DS-HF) |
类似零件编号 - SI2328DS-HF |
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类似说明 - SI2328DS-HF |
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