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FDC2512 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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FDC2512 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 4 page SMD Type www.kexin.com.cn 1 MOSFET N-Channel Enhancement MOSFET FDC2512 (KDC2512) ■ Features ● VDS (V) = 150V ● ID = 1.4A (VGS = 10V) ● RDS(ON) < 425mΩ (VGS = 10V) ● RDS(ON) < 475mΩ (VGS = 6V) 6 5 4 1 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ± 20 Drain Current - Continuous *1a 1.4 - Pulsed 8 Power Dissipation *1a 1.6 *1b 0.8 Thermal Resistance.Junction- to-Ambient *1a RthJA 78 Thermal Resistance.Junction- to-Case *1 RthJC 30 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 ℃ /W ℃ V A ID PD W 78°C/W when mounted on a 1in2 pad of 2 oz copper 156°C/W when mounted on a minimum pad of 2 oz copper D G S D D D RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθCA is determined by the user's board design. *1. *1a. *1b. 1 2 3 4 5 6 Unit: mm 0.15 +0.02 -0.02 SOT-23-6 ( ) +0.01 -0.01 +0.2 -0.1 0.4-0.1 +0.1 |
类似零件编号 - FDC2512 |
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类似说明 - FDC2512 |
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