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BC818-16 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BC818-16 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 4 page SMD Type Transistors 1 Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. www.kexin.com.cn Absolute Maximum Ratings Ta = 25 ti n U g n it a R l o b m y S r e t e m a r a P V e g a tl o v e s a b - r o t c e ll o C CBO 30 V V e g a tl o v r e tt i m e - r o t c e ll o C CEO 25 V V e g a tl o v e s a b - r e tt i m E EBO 5 V I ) C D ( t n e r r u c r o t c e ll o C C 800 mA P n o it a p i s s i d r e w o p D 300 mW T e r u t a r e p m e t n o it c n u J j 150 T e r u t a r e p m e t e g a r o t S stg -65 to +150 Marking NO. BC818-16 BC818-25 BC818-40 Marking 6E 6F 6G hFE 100 250 160 400 250 630 Electrical Characteristics Ta = 25 Symbol Test conditions Min Typ Max Unit VCBO IC = 10 A,VBE = 0 30 V VCEO IC = 10 mA, IB V 5 2 0 = VEBO IE = 100 A, IC = 0 5 V I t n e rr u c ff o t u c r o t c e ll o C CBO VCB =25 V, VBE A n 0 0 1 0 = IEBO VEB =4 V, IC A n 0 0 1 0 = IC =100 mA, VCE =1 V 100 630 IC =300 mA, VCE =1 V 60 VCE(sat) IC =500 mA, IB V 7 . 0 A m 0 5 = VBE(on) VCE=1V,IC V 2 . 1 A m 0 0 3 = C e c n a ti c a p a C t u p t u O ob VCB F p 2 1 z H M 1 = f, V 0 1 = fT IC = 10 mA, VCE =5 V, f = 50 MHz 100 MHz * Pulsed: PW 350 us, duty cycle 2% Base emitter on voltage Transition frequency Collector saturation voltage * Parameter Emitter cutoff current Emitter to base breakdown voltage hFE Collector to base breakdown voltage Collector to emitter breakdown voltage DC current gain * NPN Transistors BC818 (KC818) 0u u ● Complementary PNP type available(BC808) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 1.Base 2.Emitter 3.collector 1 2 3 Unit: mm SOT-23 0.1 +0.05 -0.01 |
类似零件编号 - BC818-16 |
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类似说明 - BC818-16 |
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