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2SA1579 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SA1579 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SA1579 ■ Features ● High breakdown voltage. (BVCEO = -120V) ● Complements the 2SC4102. ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Dissipation PC 100 mW Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -50 μA, IE=0 -120 Collector- emitter breakdown voltage VCEO Ic= -1 mA,IB=0 -120 Emitter - base breakdown voltage VEBO IE= -50μA, IC=0 -5 Collector-base cut-off current ICBO VCB= -100 V , IE=0 -0.5 Emitter cut-off current IEBO VEB= -4V , IC=0 -0.5 Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1 mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-10 mA, IB=-1 mA -1.2 DC current gain hFE VCE= -6V, IC= -2mA 180 560 Collector output capacitance Cob VCB= -12V,IE=0, f=1MHz 3.2 pF Transition frequency fT VCE= -12V, IC= -2mA,f=30MHz 140 MHz V uA V ■ Classification of hfe 1.Base 2.Emitter 3.Collector Type 2SA1579-R 2SA1579-S Range 180-390 270-560 Marking RR RS |
类似零件编号 - 2SA1579_15 |
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类似说明 - 2SA1579_15 |
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