CD22102E datasheet(5/13 Pages) HARRIS

部件名	CD22102E

功能描述	CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

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制造商	HARRIS [Harris Corporation]

网页	http://www.harris.com

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5 / 13 page

4-197

CD22101, CD22102

Functional Block Diagram

Minimum KB Pulse Width, CD22102

tW

-RL = 1kΩ, CL = 50pF,

tR, tF = 20ns

5

-

200

400

ns

10

-

90

180

ns

15

-

70

140

ns

Control Crosstalk, Data-In, Address

or Strobe to Output

11

100

10

5

-

75

-

mVPEAK

Square Wave Input = 5V,

tR, tF = 20ns, RS = 1kΩ

Input Capacitance

CIN

Any Control Input

-

5

7.5

pF

NOTES:

3. Peak-to-peak voltage symmetrical about

, unless otherwise specified.

4. RMS.

Electrical Speciﬁcations

TA = 25

oC (Continued)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

FIGURE

fIS

(kHz)

RL

(k

Ω)

VIS (V)

(Note 3)

VDD

(V)

V

DD

2

-----------

SIGNALS IN (OUT)

SIGNALS

OUT (IN)

SIGNALS

OUT (IN)

0

1

2

3

7

6

5

4

8

12

13

9

10

11

15

14

Y1

Y2

Y3

Y4

17

16

20

21

19

18

22

15

X1

X2

X3

X4

0’

1’

2’

3’

7’

6’

5’

4’

8’

12’

13’

9’

10’

11’

15’

14’

Y1’

Y2’

Y3’

Y4’

8

9

5

4

6

7

3

10

X1’

X2’

X3’

X4’

16

14

13

CD22102

ONLY

KA

KB

CD22101

ONLY

STROBE

DATA

ADDRESS

D

11

DECODER

2

1

23

C

B

A

LATCHES

(NOTE)

INPUTS PROTECTED

BY COS/MOS

PROTECTION

NETWORK

VDD

VSS

(NOTE)

NOTE:

类似零件编号 - CD22102E

制造商	部件名	数据表	功能描述
Intersil Corporation	CD22100	104Kb / 10P	CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) February 1999
Harris Corporation	CD22100	109Kb / 10P	CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating)
Intersil Corporation	CD22100E	104Kb / 10P	CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) February 1999
Harris Corporation	CD22100E	109Kb / 10P	CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating)
Intersil Corporation	CD22100F	104Kb / 10P	CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) February 1999

More results

类似说明 - CD22102E

制造商	部件名	数据表	功能描述
STMicroelectronics	M22100	265Kb / 13P	4 X 4 CROSSPOINT SWITCH WITH CONTROL MEMORY
Samsung semiconductor	KT8592	338Kb / 9P	4 x 4 CROSSPOINT SWITCH WITH CONTROL MEMORY
STMicroelectronics	M22101	157Kb / 8P	WITH CONTROL MEMORY 4 X 4 X 2 CROSSPOINT SWITCHES
Intersil Corporation	CD22100	104Kb / 10P	CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating) February 1999
Harris Corporation	CD22100	109Kb / 10P	CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20V Rating)
STMicroelectronics	M3494	463Kb / 11P	CMOS 16 x 8 CROSSPOINT WITH CONTROL MEMORY
NEC	UPD22100	151Kb / 16P	CROSSPOINT SWITCH WITH CONTROL MEMORY CMOS IC
Mitsubishi Electric Sem...	M66260FP	126Kb / 6P	8 x 4 CROSSPOINT SWITCH with MIXING FUNCTION
Texas Instruments	SN65LVDS125	140Kb / 12P	[Old version datasheet] 1.5 GBPS LVDS 4 X 4 CROSSPOINT SWITCH
Intersil Corporation	CD74HC22106	68Kb / 9P	QMOS 8 x 8 x 1 Crosspoint Switches with Memory Control January 1999