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IRF7807VD1 数据表(PDF) 1 Page - International Rectifier |
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IRF7807VD1 数据表(HTML) 1 Page - International Rectifier |
1 / 9 page IRF7807VD1 11/12/03 IRF7807VD1 R DS(on) 17m Ω Q G 9.5nC Q sw 3.4nC Q oss 12nC DEVICE CHARACTERISTICS SO-8 FETKY MOSFET / SCHOTTKY DIODE Top View 8 1 2 3 4 5 6 7 A/S A/S A/S G K/D K/D D K/D K/D • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier • 100% R G Tested Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO- 8 package is designed for vapor phase, infrared or wave soldering techniques. www.irf.com 1 PD-94078A Absolute Maximum Ratings Parameter Symbol Units Drain-to-Source Voltage VDS V Gate-to-Source Voltage V GS Continuous Output Current 25°C A (VGS ≥ 4.5V) 70°C Pulsed Drain Current IDM 25°C 70°C Schottky and Body Diode 25°C Average Forward Current f 70°C Junction & Storage Temperature Range T J , TSTG °C Thermal Resistance Parameter Symbol Typ Max Units Maximum Junction-to-Ambient eÃh RθJA ––– 50 Maximum Junction-to-Lead h RθJL ––– 20 Power Dissipation eÃÃÃÃÃÃÃÃÃÃÃ 1.6 Max 8.3 66 30 ±20 6.6 °C/W 2.5 -55 to 150 I D PD IF (AV) 3.5 2.2 W |
类似零件编号 - IRF7807VD1 |
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类似说明 - IRF7807VD1 |
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