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SD10BW 数据表(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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SD10BW 数据表(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
1 / 2 page Page:P2-P1 SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop. Guard Ring Construction For Transient Protection. Negligible Reverse Recovery Time. Low Reverse Capacitance. SD103AW :S4 SD103BW:S5 SD103CW:S6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol SD103AW SD103BW SD103CW Non-Repetitive Peak reverse voltage V 40 30 20 V Peak Repetitive Peak reverse voltage V V Working Peak Reverse Voltage V V DC Blocking V 28 21 14 V Forward Continuous Current IF 350 mA Repetitive Peak Forward Current @t≤1.0s IFRM 1.5 A Power Dissipation Pd 400 mW Thermal Resistance Junction to Ambient RθjA 300 /W Storage temperature Tstg -65-125 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage SD103AW V(BR)R 40 V IR=10μA SD103BW V(BR)R 30 V IR =10μA SD103CW V(BR)R 20 V IR =10μA Forward voltage VF 0.37 0.60 V V IF=20mA IF=200mA Reverse current SD103AW IRM 5.0 μA VR=30V SD103BW IRM 5.0 μA VR=20V SD103CW IRM 5.0 μA VR=10V Capacitance between terminals CT 50 pF VR=0,f=1MHz Reverse Recovery Time trr 10 ns IR=IF=200mA Irr=0.1*IR,RL=100Ω SOD-123 - + MARKING: R RWM RRM RM SD103AW/BW/CW Unit MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ |
类似零件编号 - SD10BW |
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类似说明 - SD10BW |
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