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FDD850N10LD 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDD850N10LD 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 11 page ©2013 Fairchild Semiconductor Corporation FDD850N10LD Rev. C2 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics of the MOSFET T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDD850N10LD 850N10LD TO-252 5L Tape and Reel 13” 16 mm 2500 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC- 0.1 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V - - 1 μA VDS = 80 V, TC = 125oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA1.0 - 2.5 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 12 A - 61 75 m Ω VGS = 5 V, ID =12 A - 64 96 gFS Forward Transconductance VDS = 10 V, ID = 15.3 A -31 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz - 1100 1465 pF Coss Output Capacitance - 80 105 pF Crss Reverse Transfer Capacitance - 42 - pF Qg(tot) Total Gate Charge at 10V VDS = 80 V, ID = 15.3 A (Note 4) - 22.2 28.9 nC Qg(tot) Total Gate Charge at 5V - 12.3 16.0 nC Qgs Gate to Source Gate Charge - 3.0 - nC Qgd Gate to Drain “Miller” Charge - 5.7 - nC ESR Equivalent Series Resistance (G-S) f = 1 MHz - 1.75 - Ω td(on) Turn-On Delay Time VDD = 50 V, ID = 15.3 A, VGS = 5 V, RG = 4.7 Ω (Note 4) -17 44 ns tr Turn-On Rise Time - 21 52 ns td(off) Turn-Off Delay Time - 27 64 ns tf Turn-Off Fall Time - 8 26 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 15.3 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 46 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 12 A - - 1.3 V trr Reverse Recovery Time VGS = 0 V, ISD = 15.3 A, VDS = 80 V, dIF/dt = 100 A/μs -38 - ns Qrr Reverse Recovery Charge - 50 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 1 mH, IAS = 9.1 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 15.3 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. |
类似零件编号 - FDD850N10LD |
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类似说明 - FDD850N10LD |
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