STD30NF04LT datasheet(5/15 Pages) STMICROELECTRONICS

部件名	STD30NF04LT

功能描述	N-channel 40 V, 0.03 typ., 30 A, STripFET II Power MOSFET in a DPAK package

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 15 page

STD30NF04LT

Electrical characteristics

Doc ID 023954 Rev 1

5/15

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

-

30

120

A

VSD

(2)

2.

Starting Tj = 25 °C, ID = 40 A, VDD = 35 V

Forward on voltage

ISD = 30 A, VGS = 0

-

1.5

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 30 A, di/dt = 100 A/µs,

VDD = 20 V, Tj = 150 °C

(see Figure 16)

-

30

60

4

ns

nC

A

类似零件编号 - STD30NF04LT

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