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STD30NF04LT 数据表(PDF) 3 Page - STMicroelectronics |
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STD30NF04LT 数据表(HTML) 3 Page - STMicroelectronics |
3 / 15 page STD30NF04LT Electrical ratings Doc ID 023954 Rev 1 3/15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 40 V VGS Gate- source voltage ± 20 V ID (1) 1. Current limited by package Drain current (continuous) at TC = 25 °C 30 A ID Drain current (continuous) at TC = 100 °C 21 A IDM Drain current (pulsed) 120 A Ptot Total dissipation at TC = 25 °C 50 W Derating factor 0.33 W/°C dv/dt (2) 2. ISD ≤ 30 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Peak diode recovery voltage slope 12.5 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 40 A, VDD = 35 V Single pulse avalanche energy 340 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 3. Thermal data Symbol Parameter Max value Unit Rthj-case Thermal resistance junction-case max 3.0 °C/W Rthj-pcb Thermal resistance junction-ambient max see Section 3 on page 8 °C/W |
类似零件编号 - STD30NF04LT |
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类似说明 - STD30NF04LT |
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