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BF1214_2015 数据表(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1214_2015 数据表(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
8 / 18 page BF1214_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 30 October 2007 8 of 18 NXP Semiconductors BF1214 Dual N-channel dual gate MOSFET (1) RG1 =47kΩ. (2) RG1 =56kΩ. (3) RG1 =68kΩ. (4) RG1 =82kΩ. (5) RG1 = 100 kΩ. (6) RG1 = 120 kΩ. (7) RG1 = 150 kΩ. (8) RG1 = 180 kΩ. (9) RG1 = 220 kΩ. VG2-S =4V; Tj =25 °C. (1) VGG = 5.0 V. (2) VGG = 4.5 V. (3) VGG = 4.0 V. (4) VGG = 3.5 V. (5) VGG = 3.0 V. Tj =25 °C; RG1 =68kΩ (connected to VGG). Fig 8. Drain current as a function of VDS and VGG; typical values Fig 9. Drain current as a function of gate2 voltage; typical values 001aag999 VGG = VDS (V) 05 4 23 1 10 15 5 20 25 ID (mA) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9) 001aah000 VG2-S (V) 05 4 23 1 10 20 30 ID (mA) 0 (1) (2) (3) (4) (5) |
类似零件编号 - BF1214_2015 |
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类似说明 - BF1214_2015 |
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