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BF1210_2015 数据表(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1210_2015 数据表(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
5 / 21 page BF1210_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 25 October 2006 5 of 21 NXP Semiconductors BF1210 Dual N-channel dual gate MOSFET [1] Calculated from S-parameters. [2] Measured in Figure 32 test circuit. Gtr transducer power gain BS =BS(opt); BL =BL(opt) [1] f = 200 MHz; GS = 2 mS; GL = 0.5 mS 31 35 39 dB f = 400 MHz; GS = 2 mS; GL = 1 mS 27 31 35 dB f = 800 MHz; GS = 3.3 mS; GL =1mS 22 26 30 dB NF noise figure f = 11 MHz; GS = 20 mS; BS = 0 S - 3 - dB f = 400 MHz; YS =YS(opt) - 0.9 1.5 dB f = 800 MHz; YS =YS(opt) - 1.2 1.9 dB Xmod cross modulation input level for k = 1 %; fw = 50 MHz; funw =60MHz [2] at 0 dB AGC 90 - - dB µV at 10 dB AGC - 90 - dB µV at 20 dB AGC - 99 - dB µV at 40 dB AGC 100 105 - dB µV Table 8. Dynamic characteristics for amplifier A …continued Common source; Tamb =25 °C; VG2-S =4V; VDS(A) =5V; ID(A) =19mA. Symbol Parameter Conditions Min Typ Max Unit |
类似零件编号 - BF1210_2015 |
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类似说明 - BF1210_2015 |
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