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BF904WR_2015 数据表(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF904WR_2015 数据表(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
6 / 12 page 1995 Apr 25 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR Fig.7 Output characteristics; typical values. VG2-S =4V. Tj =25 °C. handbook, halfpage 0 20 8 12 16 4 0 210 MLD269 46 8 I D (mA) V (V) DS 1.3 V 1.2 V 1.1 V 1.0 V 0.9 V V = 1.4 V G1 S Fig.8 Gate 1 current as a function of gate 1 voltage; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 150 100 50 0 0.5 2.5 MLD271 1.0 1.5 2.0 I G1 ( µA) V (V) G1 S 3.5 V 2.5 V 2 V 3 V V = 4 V G2 S Fig.9 Forward transfer admittance as a function of drain current; typical values. VDS =5V. Tj =25 °C. handbook, halfpage 0 40 30 20 10 0 4 8 12 16 20 MLD272 y fs (mS) I (mA) D 3 V 2.5 V 2 V V = 4 V G2 S 3.5 V Fig.10 Drain current as a function of gate 1 current; typical values. VDS = 5 V; VG2-S =4V. Tj =25 °C. handbook, halfpage 0 16 8 12 4 0 10 50 MLD273 20 30 40 I D (mA) I ( µA) G1 |
类似零件编号 - BF904WR_2015 |
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类似说明 - BF904WR_2015 |
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