 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
IRF7306TR 数据表(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF7306TR 数据表(HTML) 2 Page - International Rectifier |
|
|
2 / 9 page  IRF7306 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.037 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.10 VGS = -10V, ID = -1.8A ––– ––– 0.16 VGS = -4.5V, ID = -1.5A VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.5 ––– ––– S VDS = -24V, ID = -1.8A ––– ––– -1.0 VDS = -24V, VGS = 0V ––– ––– -25 VDS = -24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– ––– 25 ID = -1.8A Qgs Gate-to-Source Charge ––– ––– 2.9 nC VDS = -24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 9.0 VGS = -10V, See Fig. 6 and 12 td(on) Turn-On Delay Time ––– 11 ––– VDD = -15V tr Rise Time ––– 17 ––– ID = -1.8A td(off) Turn-Off Delay Time ––– 25 ––– RG = 6.0 Ω tf Fall Time ––– 18 ––– RD = 8.2Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance ––– 440 ––– VGS = 0V Coss Output Capacitance ––– 200 ––– pF VDS = -25V Crss Reverse Transfer Capacitance ––– 93 ––– ƒ = 1.0MHz, See Fig. 5 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V trr Reverse Recovery Time ––– 53 80 ns TJ = 25°C, IF = -1.8A Qrr Reverse RecoveryCharge ––– 66 99 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– -14 ––– ––– -2.5 A IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– 6.0 ––– LD Internal Drain Inductance ––– 4.0 ––– nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G S D G Surface mounted on FR-4 board, t ≤ 10sec. |
类似零件编号 - IRF7306TR |
|
类似说明 - IRF7306TR |
|
|
|
链接网址 |
| 隐私政策 |
| ALLDATASHEETCN.COM |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
