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BAP50-04W_2015 数据表(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BAP50-04W_2015 数据表(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
4 / 8 page 2001 Jan 29 4 Philips Semiconductors Product specification General purpose PIN diode BAP50-04W GRAPHICAL DATA handbook, halfpage 103 102 10 1 MLD522 10−1 1 IF (mA) rD ( Ω) 10 102 Fig.2 Forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. handbook, halfpage 020 500 0 100 200 300 400 4 Cd (fF) VR (V) 812 16 MLD523 Fig.3 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 0.5 3 0 −5 s21 2 (dB) −4 −3 −2 −1 1 f (GHz) 1.5 2 2.5 MLD524 (2) (1) (3) Fig.4 Insertion loss ( |s21|2) of the diode in on-state as a function of frequency; typical values. (1) IF = 10 mA. (2) IF = 1 mA. (3) IF = 0.5 mA. Diode inserted in series with a 50 Ω stripline circuit and biased via the analyzer Tee network. Tamb =25 °C. handbook, halfpage 0.5 3 0 −25 s21 2 (dB) −20 −15 −10 −5 1 f (GHz) 1.5 2 2.5 MLD525 Fig.5 Isolation ( |s21|2) of the diode in off-state as a function of frequency; typical values. Diode zero biased and inserted in series with a 50 Ω stripline circuit. Tamb =25 °C. |
类似零件编号 - BAP50-04W_2015 |
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类似说明 - BAP50-04W_2015 |
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