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1N4595 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

部件名 1N4595
功能描述  Silicon Standard Recovery Diode
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制造商  GENESIC [GeneSiC Semiconductor, Inc.]
网页  http://www.genesicsemi.com/
标志 GENESIC - GeneSiC Semiconductor, Inc.

1N4595 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  1N4595 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. 1N4595 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. 1N4595 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 1000 V - 1400 V
IF =150 A
Features
• High Surge Capability
DO-8 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N4594(R)
1N4595(R)
Unit
Repetitive peak reverse voltage
VRRM
1000
1200
V
DC blocking voltage
VDC
1000
1200
V
Continuous forward current
IF
150
150
A
1N4596(R)
1400
1400
150
Conditions
• Types from 1000 V to 1400 V VRRM
2. Reverse polarity (R): Stud is anode.
1N4594(R) thru 1N4596(R)
TC ≤ 110 °C
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recovery Diode
Continuous forward current
IF
150
150
A
I2t for fusing
I2t
60 Hz Half wave
37200
37200
A
2sec
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
1N4594(R)
1N4595(R)
Unit
Diode forward voltage
1.5
1.5
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.35
0.35
°C/W
-55 to 150
-55 to 150
1N4596(R)
1.5
3.5
IF,SM
150
3000
TC = 25 °C, tp = 8.3 ms
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current
IR
VR = VRRM, Tj = 110 °C
4.5
4
mA
0.35
Surge non-repetitive forward
current, Half Sine Wave
IF = 150 A, Tj = 110 °C
C
Conditions
3000
3000
A
VF
37200
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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