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74HCT541DB 数据表(PDF) 8 Page - NXP Semiconductors |
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74HCT541DB 数据表(HTML) 8 Page - NXP Semiconductors |
8 / 19 page 74HC_HCT541 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 3 — 15 April 2014 8 of 19 NXP Semiconductors 74HC541; 74HTC541 Octal buffer/line driver; 3-state 10. Dynamic characteristics VOL LOW-level output voltage VI =VIH or VIL; VCC = 4.5 V IO = 20 A; - 0 0.1 - 0.1 - 0.1 V IO = 6.0 mA; - 0.16 0.26 - 0.33 - 0.4 V II input leakage current VI = VCC or GND; VCC =5.5 V - - 0.1 - 1.0 - 1.0 A IOZ OFF-state output current per input pin; VI =VIH or VIL; VO =VCC or GND; other inputs at VCC or GND; VCC =5.5 V; IO =0A -- 0.5 - 5.0 - 10 A ICC supply current VI =VCC or GND; IO = 0 A; VCC =5.5 V - - 8.0 - 80 - 160 A I CC additional supply current per input pin; IO =0A; VI =VCC 2.1 V; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V An input - 70 252 - 315 - 343 A OE1 input - 150 540 - 675 - 735 A OE2 input - 100 360 - 450 - 490 A CI input capacitance -3.5 - - - - - pF Table 6. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Tamb = 25 C Tamb = 40 C to +85 C Tamb = 40 C to +125 C Unit Min Typ Max Min Max Min Max Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for test circuit, see Figure 8. Symbol Parameter Conditions Tamb = 25 C Tamb = 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) 74HC541 tpd propagation delay An to Yn; see Figure 6 [1] VCC = 2.0 V - 33 115 145 175 ns VCC = 4.5 V - 12 23 29 35 ns VCC = 5.0 V; CL =15pF - 10 - - - ns VCC = 6.0 V - 10 20 25 30 ns ten enable time OEn to Yn; see Figure 7 [1] VCC = 2.0 V - 55 160 200 240 ns VCC = 4.5 V - 20 32 40 48 ns VCC = 6.0 V - 16 27 34 41 ns tdis disable time OEn to Yn; see Figure 7 [1] VCC = 2.0 V - 61 160 200 240 ns VCC = 4.5 V - 22 32 40 48 ns VCC = 6.0 V - 18 27 34 41 ns |
类似零件编号 - 74HCT541DB |
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类似说明 - 74HCT541DB |
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