数据搜索系统,热门电子元器件搜索 |
|
SI4505DY 数据表(PDF) 4 Page - Vishay Siliconix |
|
SI4505DY 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 71826 S09-0868-Rev. C, 18-May-09 Vishay Siliconix Si4505DY N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 1 10 100 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient VGS - Gate-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 ID = 7.8 A 0.001 0 1 80 100 40 60 10 0.1 Time (s) 20 0.01 Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 0.1 0.1 1 10 100 Limited by R * DS(on) 0.01 1 TA = 25 °C Single Pulse 1 S 10 S DC 10 mS 1 mS 10 100 mS * VGS > minimum VGS at which RDS(on) is specified |
类似零件编号 - SI4505DY |
|
类似说明 - SI4505DY |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |