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IRF3704ZLPBF 数据表(PDF) 1 Page - International Rectifier |
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IRF3704ZLPBF 数据表(HTML) 1 Page - International Rectifier |
1 / 13 page www.irf.com 1 6/29/04 IRF3704ZPbF IRF3704ZSPbF IRF3704ZLPbF HEXFET® Power MOSFET Notes through are on page 12 Applications Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95463 D2Pak IRF3704ZS TO-220AB IRF3704Z TO-262 IRF3704ZL VDSS RDS(on) max Qg 20V 7.9m: 8.7nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation W PD @TC = 100°C Maximum Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw f Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case i ––– 2.65 °C/W RθCS Case-to-Sink, Flat Greased Surface f 0.50 ––– RθJA Junction-to-Ambient fià ––– 62 RθJA Junction-to-Ambient (PCB Mount) gi ––– 40 10 lbf yin (1.1Nym) 300 (1.6mm from case) -55 to + 175 57 0.38 28 Max. 67 h 47 h 260 ± 20 20 |
类似零件编号 - IRF3704ZLPBF |
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类似说明 - IRF3704ZLPBF |
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