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NEZ6472-4D 数据表(PDF) 2 Page - NEC |
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NEZ6472-4D 数据表(HTML) 2 Page - NEC |
2 / 18 page 2 4W/8W C-BAND POWER-GaAs FET NEZ Series ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) CHARACTERISTIC SYMBOL RATINGS UNIT NEZ-4D, 4DD NEZ-8D, 8DD Drain to Source Voltage VDS 15 15 V Gate to Source Voltage VGS – 12 –12 V Gate to Drain Voltage VGD – 18 – 18 V Drain Current ID 4.5 9.0 A Gate Current IG 25 50 mA Total Power Dissipation PT* 25 50 W Channel Temperature Tch 175 175 ˚C Storage Temperature Tstg – 65 to + 175 – 65 to + 175 ˚C *TC = 25 ˚C ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC SYMBOL Part No. MIN. TYP. MAX. UNIT TEST CONDITIONS Saturated Drain Current IDSS NEZ-4D 1.0 2.3 3.5 AVDS = 2.5 V, VGS = 0 V NEZ-8D, 8DD 2.0 4.5 7.0 Pinch-off Voltage VP NEZ-4D, 4DD – 3.5 – 2.0 – 0.5 V VDS = 2.5 V, IDS = 15 mA NEZ-8D, 8DD – 3.5 – 2.0 – 0.5 VDS = 2.5 V, IDS = 30 mA Trans-Conductance gm NEZ-4D, 4DD — 1300 — mS VDS = 2.5 V, IDS = 1 A NEZ-8D, 8DD — 2600 — VDS = 2.5 V, IDS = 2 A Gate to Drain Voltage BVGD0 NEZ-4D, 4DD 20 22 — V IGD = 15 mA NEZ-8D, 8DD 20 22 — IGD = 30 mA Thermal Resistance Rth NEZ-4D, 4DD — 5.0 6.0 ˚C/W Channel to Case NEZ-8D, 8DD — 2.5 3.0 |
类似零件编号 - NEZ6472-4D |
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类似说明 - NEZ6472-4D |
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