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STB30NF20 数据表(PDF) 1 Page - STMicroelectronics |
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STB30NF20 数据表(HTML) 1 Page - STMicroelectronics |
1 / 16 page October 2007 Rev 2 1/16 16 STP30NF20 - STB30NF20 STW30NF20 N-channel 200V - 0.065 Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET™ Power MOSFET Features ■ Gate charge minimized ■ 100% avalanche tested ■ Excellent figure of merit (RDS*Qg) ■ Very good manufactuing repeability ■ Very low intrinsic capacitances Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters. Figure 1. Internal schematic diagram Type VDSS RDS(on) ID PTOT STP30NF20 200V 0.075 Ω 30A 125W STW30NF20 200V 0.075 Ω 30A 125W STB30NF20 200V 0.075 Ω 30A 125W TO-247 1 2 3 1 2 3 TO-220 1 3 D²PAK Table 1. Device summary Order codes Marking Package Packaging STP30NF20 30NF20 TO-220 Tube STW30NF20 30NF20 TO-247 Tube STB30NF20 30NF20 D²PAK Tape & reel www.st.com |
类似零件编号 - STB30NF20 |
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类似说明 - STB30NF20 |
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