MC-4R256CPE6C datasheet(8/6 Pages) NEC

部件名	MC-4R256CPE6C

功能描述	Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT

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制造商	NEC [NEC]

网页	http://www.nec.com/

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Preliminary Data Sheet M14809EJ2V0DS00

8

MC-4R256CPE6C

Electrical Specification

Absolute Maximum Ratings

Symbol

Parameter

MIN.

MAX.

Unit

VI,ABS

Voltage applied to any RSL or CMOS signal pad with respect to GND

−0.3

VDD + 0.3

V

VDD,ABS

Voltage on VDD with respect to GND

−0.5

VDD + 1.0

V

TSTORE

Storage temperature

−50

+100

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

DC Recommended Electrical Conditions

Symbol

Parameter and conditions

MIN.

MAX.

Unit

VDD

Supply voltage

2.50

− 0.13

2.50 + 0.13

V

VCMOS

CMOS I/O power supply at pad

2.5V controllers

2.5

− 0.13

2.5 + 0.25

V

1.8V controllers

1.8

− 0.1

1.8 + 0.2

VREF

Reference voltage

1.4

− 0.2

1.4 + 0.2

V

VIL

RSL input low voltage

VREF

− 0.5

VREF

− 0.2

V

VIH

RSL input high voltage

VREF + 0.2

VREF + 0.5

V

VIL,CMOS

CMOS input low voltage

−0.3

0.5VCMOS

− 0.25

V

VIH,CMOS

CMOS input high voltage

0.5VCMOS+0.25

VCMOS + 0.3

V

VOL,CMOS

CMOS output low voltage, IOL,CMOS = 1 mA

—

0.3

V

VOH,CMOS

CMOS output high voltage, IOH,CMOS =

−0.25 mA

VCMOS

− 0.3

—

V

IREF

VREF current, VREF,MAX

−160.0

+160.0

µA

ISCK,CMD

CMOS input leakage current, (0

≤ VCMOS ≤ VDD)

−160.0

+160.0

µA

ISIN,SOUT

CMOS input leakage current, (0

≤ VCMOS ≤ VDD)

−10.0

+10.0

µA

类似零件编号 - MC-4R256CPE6C

制造商	部件名	数据表	功能描述
Elpida Memory	MC-4R256CPE6C	175Kb / 16P	Direct Rambus??DRAM RIMM??Module 256M-BYTE (128M-WORD x 16-BIT)
	MC-4R256CPE6C-653	175Kb / 16P	Direct Rambus??DRAM RIMM??Module 256M-BYTE (128M-WORD x 16-BIT)
	MC-4R256CPE6C-745	175Kb / 16P	Direct Rambus??DRAM RIMM??Module 256M-BYTE (128M-WORD x 16-BIT)
	MC-4R256CPE6C-845	175Kb / 16P	Direct Rambus??DRAM RIMM??Module 256M-BYTE (128M-WORD x 16-BIT)

More results

类似说明 - MC-4R256CPE6C

制造商	部件名	数据表	功能描述
Elpida Memory	MC-4R256CPE6C	175Kb / 16P	Direct Rambus??DRAM RIMM??Module 256M-BYTE (128M-WORD x 16-BIT)
Elpida Memory	MC-4R256FKE6D-840	490Kb / 14P	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
NEC	MC-4R256CEE6B	129Kb / 16P	Direct Rambus DRAM RIMM Module 256M-BYTE 128M-WORD x 16-BIT
Elpida Memory	MC-4R256FKE6D	116Kb / 14P	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
	MC-4R256FKE8D	116Kb / 14P	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
	MC-4R256FKE8D-840	128Kb / 14P	Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
	MC-4R256FKE8S-840	124Kb / 14P	Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
	MC-4R256FKE8S	126Kb / 14P	Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
	MC-4R512FKE6D	132Kb / 14P	Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
NEC	MC-4R128CEE6B	129Kb / 16P	Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT