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MC-4R128CPE6C-745 数据表(PDF) 10 Page - NEC |
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MC-4R128CPE6C-745 数据表(HTML) 10 Page - NEC |
10 / 6 page Preliminary Data Sheet M14807EJ2V0DS00 10 MC-4R128CPE6C RIMM Module Current Profile IDD RIMM module power conditions Note1 MAX. Unit IDD1 One RDRAM in Read Note2, balance in NAP mode -845 719.4 mA -745 654.4 -653 569.4 IDD2 One RDRAM in Read Note2, balance in Standby mode -845 1,460 mA -745 1,360 -653 1,205 IDD3 One RDRAM in Read Note2, balance in Active mode -845 1,950 mA -745 1,780 -653 1,555 IDD4 One RDRAM in Write, balance in NAP mode -845 679.4 mA -745 624.4 -653 544.4 IDD5 One RDRAM in Write, balance in Standby mode -845 1,420 mA -745 1,330 -653 1,180 IDD6 One RDRAM in Write, balance in Active mode -845 1,910 mA -745 1,750 -653 1,530 Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage patterns. Power does not include Refresh Current. 2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V. |
类似零件编号 - MC-4R128CPE6C-745 |
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类似说明 - MC-4R128CPE6C-745 |
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