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2N3055 数据表(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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2N3055 数据表(HTML) 1 Page - Tiger Electronic Co.,Ltd |
1 / 3 page Silicon NPN Power Transistor 2N3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to Type MJ2955 APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB B Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.52 ℃/W 1 TIGER ELECTRONIC CO.,LTD |
类似零件编号 - 2N3055 |
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类似说明 - 2N3055 |
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