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2SK2912 数据表(PDF) 6 Page - Hitachi Semiconductor |
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2SK2912 数据表(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page 2SK2912(L), 2SK2912(S) 6 0.1 0.3 1 3 10 30 100 010 20 30 40 50 50 2000 5000 1000 100 200 500 100 80 60 40 20 0 20 16 12 8 4 8 1624 3240 0 1000 300 30 100 3 10 1 0.1 0.3 1 3 10 30 100 1000 500 100 200 20 50 10 I = 40 A D VGS VDS V = 50 V 25 V 10 V DD di / dt = 50 A / µs V = 0, Ta = 25 °C GS V = 0 f = 1 MHz GS Ciss Coss Crss V = 10 V 25 V 50 V DD V = 10 V, V = 30 V PW = 5 µs, duty < 1 % GS DD t f r t d(on) t d(off) t Reverse Drain Current I (A) DR Body to Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics |
类似零件编号 - 2SK2912 |
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类似说明 - 2SK2912 |
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