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IRL1104S 数据表(PDF) 2 Page - International Rectifier |
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IRL1104S 数据表(HTML) 2 Page - International Rectifier |
2 / 11 page IRL1104S/L 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID =1mA ––– ––– 0.008 VGS = 10V, ID = 62A ––– ––– 0.012 W VGS = 4.5V, ID = 52A VGS(th) Gate Threshold Voltage 1.0 ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 53 ––– ––– S VDS = 25V, ID = 62A ––– ––– 25 µA VDS =40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -16V Qg Total Gate Charge ––– ––– 68 ID =62A Qgs Gate-to-Source Charge ––– ––– 24 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 34 VGS = 4.5V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 18 ––– VDD = 20V tr Rise Time ––– 257 ––– ID =54A td(off) Turn-Off Delay Time ––– 32 ––– RG = 3.6Ω , VGS = 4.5V tf Fall Time ––– 64 ––– RD = 0.4Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 3445 ––– VGS = 0V Coss Output Capacitance ––– 1065 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 7.5 nH Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 62A, di/dt ≤ 217A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: V DD = 15V, starting TJ = 25°C, L = 0.18mH RG = 25Ω, IAS = 62A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Uses IRL1104 data and test conditions. Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS =62A, VGS = 0V trr Reverse Recovery Time ––– 84 126 ns TJ = 25°C, IF =62A Qrr Reverse Recovery Charge ––– 223 335 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A 104 416 S D G Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 |
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类似说明 - IRL1104S |
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