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LS358 数据表(PDF) 1 Page - Micross Components

部件名 LS358
功能描述  Linear Systems Log Conformance Monolithic Dual PNP
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制造商  MICROSS [Micross Components]
网页  http://www.micross.com
标志 MICROSS - Micross Components

LS358 数据表(HTML) 1 Page - Micross Components

  LS358 Datasheet HTML 1Page - Micross Components  
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Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
FEATURES 
LOG CONFORMANCE  
∆re = 1.5Ω
ABSOLUTE MAXIMUM RATINGS 
1 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature ‐65°C to +200°C 
Operating Junction Temperature ‐55°C to +150°C 
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
250mW 
Continuous Power Dissipation (Both sides) 
500mW 
Linear Derating factor (One side) 
2.3mW/°C 
Linear Derating factor (Both sides) 
4.3mW/°C 
Maximum Currents 
Collector Current 
10mA 
  
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNITS 
CONDITIONS 
|VBE1 – VBE2 
Base Emitter Voltage Differential 
‐‐ 
0.4 
mV 
I= 10µA, VCE = 5V 
∆|(VBE1 – VBE2)| / ∆T 
 
Base Emitter Voltage Differential 
Change with Temperature 
‐‐ 
10 
µV/°C 
I= 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
|IB1 – IB2 
Base Current Differential 
‐‐ 
‐‐ 
10 
nA 
I= 10µA, VCE = 5V 
|∆ (IB1 – IB2)|/°C 
Base Current Differential 
 Change with Temperature 
‐‐ 
‐‐ 
0.5 
nA/°C 
IC = 10µA, VCE = 5V 
TA = ‐55°C to +125°C 
hFE1 /hFE2 
DC Current Gain Differential 
‐‐ 
‐‐ 
IC = 10µA, VCE = 5V 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
MAX. 
UNITS 
CONDITIONS 
∆re 
Log Conformance 
‐‐ 
‐‐ 
1.5 Ω 
IC = 10‐100‐1000µA, VCE = 5V 
BVCBO 
Collector to Base Voltage 
20 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVCEO 
Collector to Emitter Voltage 
20 
‐‐ 
‐‐ 
I= 10µA, I= 0 
BVEBO 
Emitter‐Base Breakdown Voltage 
6.2 
‐‐ 
‐‐ 
I= 10µA, I= 0
2 
BVCCO 
Collector to Collector Voltage 
45 
‐‐ 
‐‐ 
I= 10µA, I= 0 
 
hFE 
 
DC Current Gain 
100 
‐‐ 
600  
I= 10µA, VCE = 5V 
100 
‐‐ 
600  
I= 100µA, VCE = 5V 
100 
‐‐ 
‐‐ 
 
I= 1mA, VCE = 5V 
VCE(SAT) 
Collector Saturation Voltage 
‐‐ 
‐‐ 
0.5 
I= 1mA, I= 0.1mA 
IEBO 
Emitter Cutoff Current 
‐‐ 
‐‐ 
0.2 
nA 
I= 0, VEB = 3V 
ICBO 
Collector Cutoff Current 
‐‐ 
‐‐ 
0.2 
nA 
I= 0, VCB = 15V 
COBO 
Output Capacitance 
‐‐ 
‐‐ 
pF 
I= 0, VCB = 5V 
CC1C2 
Collector to Collector Capacitance 
‐‐ 
‐‐ 
pF 
VCC = 0V 
IC1C2 
Collector to Collector Leakage Current 
‐‐ 
‐‐ 
0.5 
nA 
VCC = ±45V 
fT 
Current Gain Bandwidth Product 
200 
‐‐ 
‐‐ 
MHz 
I= 1mA, VCE = 5V 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
dB 
I= 100µA,  VCE = 5V, BW=200Hz, RG= 10KΩ,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
 
 
 
LS358
MONOLITHIC DUAL
PNP TRANSISTOR
LS358 Features:
Tight matching
Low Output Capacitance
The LS358 is a monolithic pair of PNP transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and is ideal for use
in logging applications. See LS318 for NPN.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
Linear Systems Log Conformance Monolithic Dual PNP
Available Packages:
LS358 in P-DIP
LS358 available as bare die
Please contact Micross for full package and die dimensions:
Email: chipcomponents@micross.com
Web: www.micross.com/distribution.aspx
P-DIP (Top View)


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