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2SJ551S 数据表(PDF) 5 Page - Hitachi Semiconductor |
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2SJ551S 数据表(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SJ551(L),2SJ551(S) 5 –0.1 –0.2 –1 –2 –10 –20 100 20 50 10 0 –10 –20 –30 –40 –50 10000 1000 3000 300 10 30 100 0 –20 –40 –60 –80 0 0 –4 –8 –12 –16 16 32 48 64 80 –20 1000 200 500 100 20 10 50 –5 –0.5 di / dt = 50 A / µs V = 0, Ta = 25 °C GS V = 0 f = 1 MHz GS –100 –0.1 –0.2 –1 –2 –10 –20 –5 –0.5 Ciss Coss Crss V = –10 V –25 V –50 V DD I = –18 A D VGS VDS V = –50 V –25 V –10 V DD V = –10 V, V = –30 V PW = 5 µs, duty < 1 % GS DD t f r t d(on) t d(off) t Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics |
类似零件编号 - 2SJ551S |
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类似说明 - 2SJ551S |
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