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2SJ506S 数据表(PDF) 3 Page - Hitachi Semiconductor |
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2SJ506S 数据表(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SJ506(L), 2SJ506(S) 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS –30 — — V I D = –10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — –10 µAV DS = –30 V, VGS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Gate to source cutoff voltage V GS(off) –1.0 — –2.0 V I D = –1mA, VDS = –10V Static drain to source on state R DS(on) — 6585m Ω I D = –5A, VGS = –10V Note3 resistance R DS(on) — 110 180 m Ω I D = –5A, VGS = –4V Note3 Forward transfer admittance |y fs| 1016— S I D = –5A, VDS = –10V Note3 Input capacitance Ciss — 660 — pF V DS = –10V Output capacitance Coss — 440 — pF V GS = 0 Reverse transfer capacitance Crss — 140 — pF f = 1MHz Turn-on delay time t d(on) — 12 — ns I D = –5A, RL = 2Ω Rise time t r — 65 — ns V GS = –10V Turn-off delay time t d(off) —85 — ns Fall time t f —65 — ns Body to drain diode forward voltage V DF — –1.05 — V I F = –10A, VGS = 0 Body to drain diode reverse recovery time t rr — 65 — ns I F = –10A, VGS = 0 diF/ dt = 50A/ µs Note: 3. Pulse test |
类似零件编号 - 2SJ506S |
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类似说明 - 2SJ506S |
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