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2SC1472 数据表(PDF) 3 Page - Hitachi Semiconductor |
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2SC1472 数据表(HTML) 3 Page - Hitachi Semiconductor |
3 / 8 page 2SC1472 (K) 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V (BR)CEO 30 — — V I C = 1 mA, RBE = ∞ Collector cutoff current I CBO — — 100 nA V CB = 30 V, IE = 0 Emitter cutoff current I EBO — — 100 nA V EB = 10 V, IC = 0 DC current transfer ratio h FE1* 1 2000 — 100000 I C = 10 mA, VCE = 5 V h FE2* 1 3000 — — I C = 100 mA, VCE = 5 V (Pulse Test) h FE3* 1 3000 — — I C = 400 mA, VCE = 5 V (Pulse Test) Collector to emitter saturation voltage V CE(sat) — — 1.5 V I C = 100 mA, IB = 0.1 mA Base to emitter voltage V BE(sat) — — 2.0 V I C = 100 mA, IB = 0.1 mA Gain bandwidth product f T 50 — — MHz V CE = 5 V, IC = 10 mA Collector output capacitance Cob — — 10 pF V CB = 10 V, IE = 0, f = 1 MHz Turn on time t on — 60 — ns V CC = 11 V I C = 100 IB1 = 100 mA I B2 = –IB1 Turn off time t off — 800 — ns Storage time t stg — 350 — ns Note: 1. The 2SC1472(K) is grouped by h FE as follows. AB h FE1 2000 to 100000 5000 to 100000 h FE2 3000 min 10000 min h FE3 3000 min 10000 min Switching Time Test Circuit 50 50 0.002 –6 V 6 k 100 11 V 6 k D.U.T. CRT P.G. tr, tf ≤ 15 ns PW ≥ 10 µs duty ratio ≤ 10% + – 50 0.002 + – Unit R : Ω C : µF 13 V 0 0 10% Response Waveform 90% ton toff td tstg Input Output 90% 10% 10% 90% |
类似零件编号 - 2SC1472 |
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类似说明 - 2SC1472 |
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