FDD5810 datasheet(4/7 Pages) FAIRCHILD

部件名	FDD5810

功能描述	N-Channel Logic Level Trench MOSFET 60V, 36A, 27m

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制造商	FAIRCHILD [Fairchild Semiconductor]

网页	http://www.fairchildsemi.com

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4 / 7 page

FDD5810 Rev. A (W)

www.fairchildsemi.com

4

Typical Characteristics T

J = 25°C unless otherwise noted

Figure 1. Normalized Power Dissipation vs Case

Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

TC, CASE TEMPERATURE (oC)

0

25

50

75

100

175

0.2

0.4

0.6

0.8

1.0

1.2

125

150

25

50

75

100

125

150

175

0

10

20

30

40

TC, CASE TEMPERATURE(oC)

VGS = 5V

VGS = 10V

0.01

0.1

1

10-5

10-4

10-3

10-2

10-1

100

101

2

t, RECTANGULAR PULSE DURATION (s)

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x RθJC + TC

PDM

t1

t2

0.5

0.2

0.1

0.05

0.01

0.02

DUTY CYCLE - DESCENDING ORDER

SINGLE PULSE

100

10-5

10-4

10-3

10-2

10-1

100

101

600

30

t, PULSE WIDTH (s)

TC = 25oC

I = I25

175 - TC

150

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

VGS = 5V

类似零件编号 - FDD5810

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FDD5810	266Kb / 7P	N-Channel PowerTrench짰 MOSFET 60V, 35A, 27mOhm
Fairchild Semiconductor	FDD5810	359Kb / 7P	N-Channel Logic Level Trench짰 MOSFET
Inchange Semiconductor ...	FDD5810	310Kb / 2P	isc N-Channel MOSFET Transistor
ON Semiconductor	FDD5810-F085	350Kb / 8P	N-Channel Logic Level Trench짰MOSFET September-2017,Rev.1
Fairchild Semiconductor	FDD5810	359Kb / 7P	N-Channel Logic Level Trench짰 MOSFET

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