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FQD7P06TF 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FQD7P06TF 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page ©2001 Fairchild Semiconductor Corporation FQD7P06 Rev. C0 www.fairchildsemi.com 3 0 4 8 12 16 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ※ Note : T J = 25℃ V GS = - 20V V GS = - 10V -I D , Drain Current [A] 10 -1 10 0 10 1 10 -1 10 0 10 1 V GS Top : - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25℃ -V DS, Drain-Source Voltage [V] 0 1234 56 7 0 2 4 6 8 10 12 V DS = -30V V DS = -48V ※ Note : I D = -7.0 A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 0 100 200 300 400 500 600 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss Coss Ciss VDS, Drain-Source Voltage [V] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 10 -1 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ -V SD , Source-Drain Voltage [V] 24 6 8 10 10 -1 10 0 10 1 150℃ 25℃ -55℃ ※ Notes : 1. V DS = -30V 2. 250μ s Pulse Test -V GS , Gate-Source Voltage [V] Typical Characteristics Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 2. Transfer Characteristics Figure 1. On-Region Characteristics |
类似零件编号 - FQD7P06TF |
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类似说明 - FQD7P06TF |
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