数据搜索系统,热门电子元器件搜索 |
|
FGB20N6S2DT 数据表(PDF) 2 Page - Fairchild Semiconductor |
|
FGB20N6S2DT 数据表(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2002 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1 Package Marking and Ordering Information Electrical Characteristics T J = 25°C unless otherwise noted Off State Characteristics On State Characteristics Dynamic Characteristics Switching Characteristics Thermal Characteristics Device Marking Device Package Tape Width Quantity 20N6S2D FGH20N6S2D TO-247 N/A 30 20N6S2D FGP20N6S2D TO-220AB N/A 50 20N6S2D FGB20N6S2D TO-263AB N/A 50 20N6S2D FGB20N6S2DT TO-263AB 24mm 800 units Symbol Parameter Test Conditions Min Typ Max Units BVCES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 600 - - V ICES Collector to Emitter Leakage Current VCE = 600V TJ = 25°C - - 250 µA TJ = 125°C- - 2.0 mA IGES Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA VCE(SAT) Collector to Emitter Saturation Voltage IC = 7.0A, VGE = 15V TJ = 25°C- 2.2 2.7 V TJ = 125°C- 1.9 2.2 V VEC Diode Forward Voltage IEC = 7.0A - 1.9 2.7 V QG(ON) Gate Charge IC = 7.0A, VCE = 300V VGE = 15V - 30 36 nC VGE = 20V - 38 45 nC VGE(TH) Gate to Emitter Threshold Voltage IC = 250µA, VCE = 600V 3.5 4.3 5.0 V VGEP Gate to Emitter Plateau Voltage IC = 7.0A, VCE = 300V - 6.5 8.0 V SSOA Switching SOA TJ = 150°C, RG = 25Ω, VGE = 15V, L = 0.5mH VCE = 600V 35 - - A td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 25°C, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω L = 0.5mH Test Circuit - Figure 26 -7.7 - ns trI Current Rise Time - 4.5 - ns td(OFF)I Current Turn-Off Delay Time - 87 - ns tfI Current Fall Time - 50 - ns EON1 Turn-On Energy (Note 1) - 25 - µJ EON2 Turn-On Energy (Note 1) - 85 - µJ EOFF Turn-Off Energy (Note 2) - 58 75 µJ td(ON)I Current Turn-On Delay Time IGBT and Diode at TJ = 125°C ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω L = 0.5mH Test Circuit - Figure 26 -7 - ns trI Current Rise Time - 4.5 - ns td(OFF)I Current Turn-Off Delay Time - 120 145 ns tfI Current Fall Time - 85 105 ns EON1 Turn-On Energy (Note 1) - 20 - µJ EON2 Turn-On Energy (Note 1) - 125 140 µJ EOFF Turn-Off Energy (Note 2) - 135 180 µJ trr Diode Reverse Recovery Time IEC = 7A, dIEC/dt = 200A/µs - 26 31 ns IEC = 1A, dIEC/dt = 200A/µs - 20 24 ns RθJC Thermal Resistance Junction-Case IGBT - - 1.0 °C/W Diode 2.2 °C/W NOTE: 1. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 26. 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc- es the true total Turn-Off Energy Loss. |
类似零件编号 - FGB20N6S2DT |
|
类似说明 - FGB20N6S2DT |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |