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SD101B 数据表(PDF) 1 Page - General Semiconductor |
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SD101B 数据表(HTML) 1 Page - General Semiconductor |
1 / 3 page FEATURES Schottky Diodes MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified DO-35 max. ∅ Cathode .020 (0.52) Mark max. ∅.079 (2.0) Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g 4/98 SD101A THRU SD101C Symbol Value Unit Peak Inverse Voltage SD101A SD101B SD101C VRRM VRRM VRRM 60 50 40 V V V Power Dissipation (Infinite Heat Sink) Ptot 4001) 2) mW Max. Single Cycle Surge 10 µs Square Wave IFSM 2A Junction Temperature Tj 1251) °C Storage Temperature Range TS – 55 to +1501) °C 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature For general purpose applications. The LL101 series is a metal-on-sili- con Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. These diodes are also available in the SOD-123 case with type designations SD101AW thru SD101CW and in the MiniMELF case with type designations LL101A thru LL101C. ♦ ♦ ♦ |
类似零件编号 - SD101B |
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类似说明 - SD101B |
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