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2SK3432 数据表(PDF) 3 Page - NEC |
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2SK3432 数据表(HTML) 3 Page - NEC |
3 / 4 page Preliminary Data Sheet D14601EJ1V0DS00 3 2SK3432 PACKAGE DRAWINGS (Unit: mm) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 10.6 MAX. 10.0 3.6±0.2 4 1.3±0.2 0.75±0.1 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 φ 1) TO-220AB (MP-25) 3) TO-220SMD (MP-25Z) 4.8 MAX. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3 (10) 4 1.3±0.2 0.75±0.3 2.54 TYP. 2.54 TYP. 1.3±0.2 0.5±0.2 2.8±0.2 2) TO-262 (MP-25 Fin Cut) (10) 1.4±0.2 2.54 TYP. 2.54 TYP. 123 4 4.8 MAX. 1.3±0.2 0.5±0.2 (0.5R) (0.8R) 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.0±0.3 EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain |
类似零件编号 - 2SK3432 |
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类似说明 - 2SK3432 |
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