BC549 datasheet(2/6 Pages) GE

部件名	BC549

功能描述	Small Signal Transistors (NPN)

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制造商	GE [General Semiconductor]

网页	http://www.vishay.com

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2 / 6 page

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

h-Parameters at VCE = 5 V, IC = 2 mA,

f = 1 kHz,

Small Signal Current Gain

Current Gain Group A

B

C

Input Impedance

Current Gain Group A

B

C

Output Admittance

Current Gain Group A

B

C

Reverse Voltage Transfer Ratio

Current Gain Group A

B

C

hfe

hie

hoe

hre

–

1.6

3.2

6

–

220

330

600

2.7

4.5

8.7

18

30

60

1.5 · 10–4

2 · 10–4

3 · 10–4

–

4.5

8.5

15

30

60

110

–

k

Ω

k

Ω

k

Ω

µS

–

DC Current Gain

at VCE = 5 V, IC = 10µA

Current Gain Group A

B

C

at VCE = 5 V, IC = 2 mA

Current Gain Group A

B

C

at VCE = 5 V, IC = 100 mA

Current Gain Group A

B

C

hFE

–

110

200

420

–

90

150

270

180

290

500

120

200

400

–

220

450

800

–

Thermal Resistance Junction to Ambient Air

RthJA

–

2501)

K/W

Collector Saturation Voltage

at IC = 10 mA, IB = 0.5 mA

at IC = 100 mA, IB = 5 mA

VCEsat

–

80

200

600

mV

Base Saturation Voltage

at IC = 10 mA, IB = 0.5 mA

at IC = 100 mA, IB = 5 mA

VBEsat

–

700

900

–

mV

Base-Emitter Voltage

at VCE = 5 V, IC = 2 mA

at VCE = 5 V, IC = 10 mA

VBE

580

–

660

–

700

720

mV

Collector-Emitter Cutoff Current

at VCE = 80 V

BC546

at VCE = 50 V

BC547

at VCE = 30 V

BC548, BC549

at VCE = 80 V, Tj = 125 °C

BC546

at VCE = 50 V, Tj = 125 °C

BC547

ICES

–

0.2

–

15

4

nA

µA

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

BC546 THRU BC549

类似零件编号 - BC549

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