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BAW75 数据表(PDF) 1 Page - General Semiconductor

部件名 BAW75
功能描述  Small-Signal Diodes
Download  4 Pages
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制造商  GE [General Semiconductor]
网页  http://www.vishay.com
标志 GE - General Semiconductor

BAW75 数据表(HTML) 1 Page - General Semiconductor

  BAW75 Datasheet HTML 1Page - General Semiconductor BAW75 Datasheet HTML 2Page - General Semiconductor BAW75 Datasheet HTML 3Page - General Semiconductor BAW75 Datasheet HTML 4Page - General Semiconductor  
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Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Reverse Voltage
BAW75
VR
25
V
BAW76
50
Peak Reverse Voltage
BAW75
VRM
35
V
BAW76
75
Rectified Current (Average)
Half Wave Rectification with Resistive Load
IO
150(1)
mA
at TA = 25°C and f
≥ 50 Hz
Surge Forward Current at t < 1µs, Tj = 25°C
IFSM
2A
Power Dissipation at TA = 25°C
Ptot
500(1)
mW
Thermal Resistance Junction to Ambient Air
R
ΘJA
0.35(1)
°C/W
Junction Temperature
Tj
200
°C
Storage Temperature Range
TS
–65 to +200
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
BAW75 and BAW76
Small-Signal Diodes
5/2/00
Features
• Silicon Epitaxial Planar Diodes
• Fast switching diodes.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
New
Product
DO-204AH (DO-35 Glass)
Dimensions in inches and (millimeters)


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