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2SK3326 数据表(PDF) 1 Page - NEC |
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2SK3326 数据表(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 2000 MOS FIELD EFFECT TRANSISTOR 2SK3326 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. D14204EJ1V0DS00 (1st edition) Date Published March 2000 NS CP(K) Printed in Japan DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge : QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 0.85 Ω MAX. (VGS = 10 V, ID = 5.0 A) • Avalanche capability ratings • Isolated TO-220(MP-45F) package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 500 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±30 V Drain Current (DC) ID(DC) ±10 A Drain Current (pulse) Note1 ID(pulse) ±40 A Total Power Dissipation (TC = 25°C) PT 40 W Total Power Dissipation (TA = 25°C) PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 10.7 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3326 Isolated TO-220 (Isolated TO-220) |
类似零件编号 - 2SK3326 |
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类似说明 - 2SK3326 |
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