2SK3326 datasheet(1/8 Pages) NEC

部件名	2SK3326

功能描述	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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制造商	NEC [NEC]

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©

2000

MOS FIELD EFFECT TRANSISTOR

2SK3326

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

D14204EJ1V0DS00 (1st edition)

Date Published

March 2000 NS CP(K)

Printed in Japan

DESCRIPTION

The 2SK3326 is N-Channel DMOS FET device that features

a low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power

supply, AC adapter.

FEATURES

• Low gate charge :

QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

RDS(on) = 0.85

Ω MAX. (VGS = 10 V, ID = 5.0 A)

• Avalanche capability ratings

• Isolated TO-220(MP-45F) package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

500

V

Gate to Source Voltage (VDS = 0 V)

VGSS(AC)

±30

V

Drain Current (DC)

ID(DC)

±10

A

Drain Current (pulse)

Note1

ID(pulse)

±40

A

Total Power Dissipation (TC = 25°C)

PT

40

W

Total Power Dissipation (TA = 25°C)

PT

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

10

A

Single Avalanche Energy

Note2

EAS

10.7

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1 %

2. Starting Tch = 25 °C, VDD = 150 V, RG = 25

Ω, VGS = 20 V → 0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3326

Isolated TO-220

(Isolated TO-220)

类似零件编号 - 2SK3326

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	2SK3326	323Kb / 2P	isc N-Channel MOSFET Transistor
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	2SK3326B	345Kb / 9P	MOS FIELD EFFECT TRANSISTOR 2006
	2SK3326B-S17-AY	345Kb / 9P	MOS FIELD EFFECT TRANSISTOR 2006

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