数据搜索系统,热门电子元器件搜索 |
|
2SK3324 数据表(PDF) 7 Page - NEC |
|
2SK3324 数据表(HTML) 7 Page - NEC |
7 / 8 page Data Sheet D14203EJ2V0DS00 7 2SK3324 PACKAGE DRAWING (Unit : mm) TO-3P (MP-88) EQUIVALENT CIRCUIT Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 15.7 MAX. 3.2 ±0.2 4.7 MAX. 1.5 TYP. 2.8 ±0.1 1.0 ±0.2 0.6 ±0.1 2.2 ±0.2 5.45 TYP. 5.45 TYP. 1: Gate 2: Drain 3: Source 4: Fin (Drain) 1 23 4 Source Body Diode Gate Drain |
类似零件编号 - 2SK3324 |
|
类似说明 - 2SK3324 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |