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2SK3299-ZJ 数据表(PDF) 1 Page - NEC |
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2SK3299-ZJ 数据表(HTML) 1 Page - NEC |
1 / 8 page © 1999,2000 MOS FIELD EFFECT TRANSISTOR 2SK3299 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D14060EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark • • • • shows major revised points. DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 10 A) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 5.0 A) •Avalanche capability ratings •Surface mount package available ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±10 A Drain Current (Pulse) Note1 ID(pulse) ±40 A Total Power Dissipation (TA = 25°C) PT1 1.5 W Total Power Dissipation (TC = 25°C) PT2 75 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 66.7 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3299 TO-220AB 2SK3299-S TO-262 2SK3299-ZJ TO-263 |
类似零件编号 - 2SK3299-ZJ |
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类似说明 - 2SK3299-ZJ |
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