LM3556_14 datasheet(5/31 Pages) TI1

部件名	LM3556

功能描述	1.5A Synchronous Boost LED Flash Driver w/ High-Side Current Source

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制造商	TI1 [Texas Instruments]

网页	http://www.ti.com

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LM3556

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SNVS796C – AUGUST 2011 – REVISED APRIL 2013

ABSOLUTE MAXIMUM RATINGS

(1) (2)

VIN, VSW ,VOUT

−0.3V to 6V

VSCL, VSDA, VENABLE, VSTROBE, VTX, VTORCH, VLED, VTEMP

−0.3V to the lesser of (VIN+0.3V) w/ 6V

max

Continuous Power Dissipation

(3)

Internally Limited

Junction Temperature (TJ-MAX)

+150°C

Storage Temperature Range

−65°C to +150°C

Maximum Lead Temperature (Soldering)

(4)

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND pin.

(3)

Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ = +150°C (typ.) and

disengages at TJ=+135°C (typ.). Thermal shutdown is guaranteed by design.

(4)

For detailed soldering specifications and information, please refer to Texas Instruments Application Note 1112: DSBGA Wafer Level chip

Scale Package (AN-1112)

OPERATING RATINGS

(1) (2)

VIN

2.5V to 5.5V

Junction Temperature (TJ)

−40°C to +125°C

Ambient Temperature (TA)

(3)

−40°C to +85°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND pin.

(3)

In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may

have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =

+125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to-ambient thermal resistance of the

part/package in the application (

θJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (θJA × PD-MAX).

THERMAL PROPERTIES

Thermal Junction-to-Ambient Resistance (

θJA)

(1)

60°C/W

(1)

Junction-to-ambient thermal resistance (

θJA) is taken from a thermal modeling result, performed under the conditions and guidelines set

forth in the JEDEC standard JESD51-7. The test board is a 4-layer FR-4 board measuring 102 mm x 76 mm x 1.6 mm with a 2x1 array

of thermal vias. The ground plane on the board is 50 mm x 50 mm. Thickness of copper layers are 36 µm/18 µm/18 µm/36 µm (1.5

oz/1oz/1oz/1.5 oz). Ambient temperature in simulation is 22°C, still air. Power dissipation is 1W.

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