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STGB35N35LZ-1 数据表(PDF) 3 Page - STMicroelectronics |
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STGB35N35LZ-1 数据表(HTML) 3 Page - STMicroelectronics |
3 / 18 page DocID12253 Rev 6 3/18 STGB35N35LZ, STGP35N35LZ Electrical ratings 18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) V CES (clamped) V V ECS Emitter collector voltage (V GE = 0) 20 V I C (1) 1. Calculated according to the iterative formula: Continuous collector current at T C = 25 °C 40 A I C (1) Continuous collector current at T C = 100 °C 30 A I CP (2) 2. Pulse width limited by maximum junction temperature Pulsed collector current 80 A V GE Gate-emitter voltage V GE (clamped) V P TOT Total dissipation at T C = 25 °C 176 W E AS Single pulse energy (T C =25 °C, L=1.6 mH, I C = 22 A, V CC = 50 V) 450 mJ ESD Human body model (R=1,5 k Ω, C=100 pF) 8 kV Machine model (R=0, C=100 pF) 800 V Charged device model 2 kV T stg Storage temperature – 55 to 175 °C T j Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 0.85 °C/W R thj-amb Thermal resistance junction-ambient 62.5 °C/W I C T C () T jm a x () T C – R thj c – V CE s a t () max () Tjmax () IC TC () , () × ------------------------------------------------------------------------------------------------------- = |
类似零件编号 - STGB35N35LZ-1 |
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类似说明 - STGB35N35LZ-1 |
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