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LM20242 数据表(PDF) 3 Page - Texas Instruments |
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LM20242 数据表(HTML) 3 Page - Texas Instruments |
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3 / 28 page  LM20242 www.ti.com SNVS534D – OCTOBER 2007 – REVISED MAY 2008 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) VIN to GND -0.3V to +38V BOOT to GND -0.3V to +43V BOOT to SW -0.3V to +7V SW to GND -0.5V to +38V SW to GND (Transient) -1.5V (< 20 ns) FB, EN, SS/TRK, PGOOD to GND -0.3V to +6V VCC to GND -0.3V to +8V Storage Temperature -65°C to 150°C ESD Rating Human Body Model (2) 2kV (1) Absolute Maximum Ratings indicate limits beyond witch damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. (2) The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor to each pin. OPERATING RATINGS VIN to GND +4.5V to +36V Junction Temperature −40°C to + 125°C ELECTRICAL CHARACTERISTICS Unless otherwise stated, the following conditions apply: VVIN = 12V. Limits in standard type are for TJ = 25°C only, limits in bold face type apply over the junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Symbol Parameter Conditions Min Typ Max Units VFB Feedback pin voltage VVIN = 4.5V to 36V 0.788 0.8 0.812 V VCOMP = 500 mV to 700 mV RHSW-DS(ON) High-Side MOSFET On-Resistance ISW = 200 mA 130 225 m Ω RLSW-DS(ON) Low-Side MOSFET On-Resistance ISW = 200 mA 110 190 m Ω IQ Operating Quiescent Current VVIN = 4.5V to 36V 2 3 mA ISD Shutdown Quiescent current VEN = 0V 150 180 µA VUVLO VIN Under Voltage Lockout Rising VVIN 3.65 3.9 4.2 V VUVLO(HYS) VIN Under Voltage Lockout Hysteresis 200 400 mV VVCC VCC Voltage IVCC = -5 mA, VEN = 5V 5.5 V ISS Soft-Start Pin Source Current VSS = 0V 3 5 7 µA IBOOT BOOT Diode Leakage VBOOT = 4V 10 nA VF-BOOT BOOT Diode Forward Voltage IBOOT = -100 mA 0.9 1.1 V Powergood VFB(OVP) Over Voltage Protection Rising Threshold VFB(OVP) / VFB 107 110 112 % VFB(OVP-HYS) Over Voltage Protection Hysteresis ΔVFB(OVP) / VFB 2 3 % VFB(PG) PGOOD Rising Threshold VFB(PG) / VFB 93 95 97 % VFB(PG-HYS) PGOOD Hysteresis ΔVFB(PG) / VFB 2 3 % TPGOOD PGOOD delay 20 µs IPGOOD(SNK) PGOOD Low Sink Current VPGOOD = 0.5V 0.6 1 mA IPGOOD(SRC) PGOOD High Leakage Current VPGOOD = 5V 5 200 nA Copyright © 2007–2008, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LM20242 |
类似零件编号 - LM20242 |
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类似说明 - LM20242 |
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