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CDBV3-0720-G 数据表(PDF) 1 Page - Comchip Technology |
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CDBV3-0720-G 数据表(HTML) 1 Page - Comchip Technology |
1 / 4 page CDBV3-0720-G Page 1 QW-BB057 REV:A Electrical Characteristics (at Ta=25°C unless otherwise noded) Symbol Parameter Test Conditions Min Max Unit Forward voltage IF = 700mA VF V 20 Reverse voltage leakage current IR μA VR = 20V Reverse breakdown voltage 0.49 200 Maximum Rating (at Ta=25°C unless otherwise noted) IO VR VRM Power Dissipation DC Blocking Voltage Non-Repetitive Peak Reverse Voltage Symbol Parameter Limit Unit Average Rectified Output Current mA V V 700 20 25 150 PD mW 125 TSTG Tj Storage Temperature Junction Temperature °C Features -For switching power supply -Ultra low VF -Low-power rectification Io = 700 mA VR = 20 Volts RoHS Device SMD Schottky Barrier Diode Comchip Technology CO., LTD. V(BR) IR =200μA V -Case:SOT-323, molded plastic. -Terminals:Soldeable per MIL-STD-750, method 2026. -Approx.weight: 0.0055 gram. Mechanical data -55~+150 Circuit Diagram 1 2 3 °C Dimensions in inches and (millimeter) SOT-323 3 1 2 0.087(2.20) 0.079(2.00) 0.053(1.35) 0.045(1.15) 0.055(1.40) 0.047(1.20) 0.039(1.00) 0.035(0.90) 0.016(0.40) 0.008(0.20) 0.006(0.15) 0.003(0.08) 0.096(2.45) 0.085(2.15) 0.004(0.10) 0.010(0.26) 0.018(0.46) 0.000(0.00) Company reserves the right to improve product design , functions and reliability without notice. -Mounting position: Any. |
类似零件编号 - CDBV3-0720-G |
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类似说明 - CDBV3-0720-G |
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