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SM4T12AY 数据表(PDF) 4 Page - STMicroelectronics |
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SM4T12AY 数据表(HTML) 4 Page - STMicroelectronics |
4 / 12 page Characteristics SM4TY 4/12 Doc ID 17862 Rev 3 Figure 3. Peak pulse power dissipation versus initial junction temperature Figure 4. Peak pulse power versus exponential pulse duration (Tj initial = 25 °C) 0 100 200 300 400 500 0 25 50 75 100 125 150 175 P (W) PP T (°C) j Pulse = 10/1000 µs 0.1 1.0 10.0 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 P (kW) PP tp(ms) Figure 5. Clamping voltage versus peak pulse current (exponential waveform, maximum values) Figure 6. Junction capacitance versus reverse applied voltage for unidirectional types (typical values) I (A) PP 0.1 1.0 10.0 100.0 1000.0 1 10 100 1000 10/1000 µs 8/20 µs V (V) CL T initial = 25 °C j C(pF) 10 100 1000 10000 1 10 100 1000 SM4T6V7AY SM4T30AY SM4T82AY V (V) R F = 1 Mhz V = 30 mV T = 25 °C OSC RMS j Figure 7. Junction capacitance versus reverse applied voltage for bidirectional types (typical values) Figure 8. Relative variation of thermal impedance, junction to ambient, versus pulse duration C(pF) 10 100 1000 10000 1 10 100 1000 SM4T6V7CAY SM4T30CAY SM4T82CAY V (V) R F = 1 Mhz V = 30 mV T = 25 °C OSC RMS j 0.01 0.10 1.00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Recommended pad layout Z/R th(j-a) th(j-a) tp(s) Printed circuit board FR4, copper thickness = 35 µm |
类似零件编号 - SM4T12AY |
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类似说明 - SM4T12AY |
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