BYG10M-E3 datasheet(3/5 Pages) VISHAY

部件名	BYG10M-E3

功能描述	Standard Avalanche SMD Rectifier

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制造商	VISHAY [Vishay Siliconix]

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BYG10x-E3/HE3

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Vishay General Semiconductor

Revision: 20-May-14

3

Document Number: 88957

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Reverse Current vs. Junction Temperature

Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Fig. 6 - Reverse Recovery Time vs. Forward Current

Fig. 7 - Reverse Recovery Charge vs. Forward Current



1

10

100

1000

25

50

75

100

125

150

Junction Temperature (°C)

V

R = VRRM

0

50

100

150

200

250

300

350

400

25

50

75

100

125

150

V

R = VRRM

P

R - Limit at 100 % VR

Junction Temperature (°C)

P

R - Limit at 80 % VR

0

5

10

15

20

25

30

0.1

1

10

100

f = 1 MHz

Reverse Voltage (V)

0

1000

2000

3000

4000

5000

0.2

0.4

0.6

0.8

Forward Current (A)

1.0

T

A = 100 °C

T

A = 125 °C

T

A = 25 °C

T

A = 75 °C

T

A = 50 °C

I

R = 0.5 A, iR = 0.125 A

0

400

800

1200

1600

2000

0.2

0.4

0.6

0.8

Forward Current (A)

1.0

T

A = 100 °C

T

A = 125 °C

T

A = 25 °C

T

A = 75 °C

T

A = 50 °C

I

R = 0.5 A, iR = 0.125 A

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Vishay Siliconix	BYG10M	59Kb / 5P	Silicon Mesa SMD Rectifier Rev. 3, 24-Jun-98
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制造商	部件名	数据表	功能描述
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BYG10M-E3 数据表(PDF) 3 Page - Vishay Siliconix

BYG10M-E3 数据表(HTML) 3 Page - Vishay Siliconix

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BYG10M-E3 数据表(PDF) 3 Page - Vishay Siliconix

BYG10M-E3 数据表(HTML) 3 Page - Vishay Siliconix

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