数据搜索系统,热门电子元器件搜索 |
|
2SK2654-01 数据表(PDF) 2 Page - Fuji Electric |
|
2SK2654-01 数据表(HTML) 2 Page - Fuji Electric |
2 / 2 page N-channel MOS-FET 2SK2654-01 900V 2Ω 8A 150W FAP-IIS Series > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics ↑ ID=f(VDS); 80µs pulse test; TC=25°C ↑ RDS(on) = f(Tch); ID=4A; VGS=10V ↑ ID=f(VGS); 80µs pulse test;VDS=25V; Tch=25°C 1 2 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ RDS(on)=f(ID); 80µs pulse test; TC=25°C ↑ gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C ↑ VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 5 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitances vs. VDS Avalanche Energy Derating Forward Characteristics of Reverse Diode ↑ C=f(VDS); VGS=0V; f=1MHz ↑ Eas=f(starting Tch); VCC=90V; IAV=8A ↑ IF=f(VSD); 80µs pulse test; VGS=0V 7 8 9 VDS [V] → Starting Tch [°C] → VSD [V] → Allowable Power Dissipation vs. TC Safe operation area PD=f(Tc) ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance ↑ 10 ↑ 12 Zthch=f(t) parameter:D=t/T Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice! |
类似零件编号 - 2SK2654-01 |
|
类似说明 - 2SK2654-01 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |