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IRF9510S 数据表(PDF) 5 Page - Vishay Siliconix |
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IRF9510S 数据表(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Document Number: 91073 www.vishay.com S11-1050-Rev. C, 30-May-11 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9510S, SiHF9510S Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 150 TC, Case Temperature (°C) 25 91073_09 125 100 75 50 0.0 1.0 2.0 3.0 4.0 175 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % R D V GS R g D.U.T. - 10 V V DS V DD V GS 10 % 90 % V DS t d(on) t r t d(off) t f 10 1 0.1 10-2 10-5 10-4 10-3 10-2 0.1 1 10 P DM t 1 t 2 t1, Rectangular Pulse Duration (s) Notes: 1. Duty Factor, D = t 1/t2 2. Peak T j = PDM x ZthJC + TC Single Pulse (Thermal Response) 0.2 0.05 0.02 0.01 91073_11 0.1 D = 0.5 Rg IAS 0.01 Ω tp D.U.T. L V DS + - V DD - 10 V Vary tp to obtain required IAS IAS VDS VDD VDS tp |
类似零件编号 - IRF9510S |
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类似说明 - IRF9510S |
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