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IRF6716MTRPBF 数据表(PDF) 1 Page - International Rectifier

部件名 IRF6716MTRPBF
功能描述  RoHs Compliant and Halogen Free
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF6716MTRPBF 数据表(HTML) 1 Page - International Rectifier

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www.irf.com
1
04/30/09
IRF6716MPbF
IRF6716MTRPbF
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.65mH, RG = 25Ω, IAS = 32A.
Notes:
DirectFET
™ ISOMETRIC
Description
The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6716MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6716MPbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6716MPbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
MX
0
102030405060
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 20V
VDS= 13V
ID= 32A
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
32
Max.
31
180
320
±20
25
39
330
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 1.2m
Ω@10V 2.0mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
39nC
12nC
5.3nC
28nC
27nC
1.9V
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
ID = 40A
TJ = 25°C
TJ = 125°C
SQ
SX
ST
MQ
MX
MT
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

DirectFET
™ Power MOSFET ‚
l RoHs Compliant and Halogen Free

l Low Profile (<0.6 mm)
l Dual Sided Cooling Compatible

l Ultra Low Package Inductance
l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter

l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques

l 100% Rg tested
PD - 97274C


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