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IRF6674TRPBF 数据表(PDF) 7 Page - International Rectifier |
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IRF6674TRPBF 数据表(HTML) 7 Page - International Rectifier |
7 / 9 page IRF6674TRPbF www.irf.com 7 Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period *** VGS = 5V for Logic Level Devices *** + - + + + - - - RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T ** * * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation). Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations G=GATE D=DRAIN S=SOURCE S S G D DD D Note: For the most current drawing please refer to IR website at http://www.irf.com/package |
类似零件编号 - IRF6674TRPBF |
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类似说明 - IRF6674TRPBF |
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